HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED Revision:SEMI HB9-0818 - Inactive 2 — Guide for the

2 — Guide for the Qualification of Polymer Assemblies Used in Ultrapure Water and Liquid Chemical Systems in Semiconductor Process Equipment

previously published in 1994

SEMI E111-0117 (technical revision)

1  It is the intent of this Standard to provide radio frequency (RF) power-delivery system specifications for semiconductor processing equipment that leads to improved system and subsystem performance

HB00900 - SEMI HB9 - Test Method and Acceptance Criteria for Visual Inspection of Surface Defects of GaN Epitaxial Wafers Used for Manufacturing HB-LED Revision:SEMI HB9-0818 - Inactive 2 — Guide for theNOTICE: This Standard or Safety Guideline has an Inactive Status because the conditions to maintain Current Status have not been met. Inactive Standards or Safety Guidelines are available from SEMI and continue to be valid for use. The purpose of this Standard is to provide test methods to visually detect surface defects of GaN epitaxial wafer for manufacturing high brightness LEDs, and to define acceptance criteria for the types, number, size, and